Abstract:Recently, a second-type two-dimensional (2D) semiconductor Bi2O2Se with high carrier mobility was successfully fabricated by using the chemical vapor deposition (CVD) method. So far the surface-related property of Bi2O2Se remains a mystery to us. To theoretically explore such surface properties, we investigated the stability and electronic structure of the Bi2O2Se (100) and (110) surfaces by first-principles computations. It is found that (100) surfaces possess both the semiconducting nature and comparable stability as traditional adopted (001) surfaces. Thickness-dependent oscillation behavior is observed in the surface energy and band gap values of (100) surfaces, which can be attributed to the odd–even layer effect. Further studies indicate that odd layers will achieve reduced band gaps compared to the bulk phase while the ones with even layers exhibit larger values, and a similar effect in Bi2O2Te and Bi2O2S is also verified due to the same crystalline structure. To understand such an odd–even layer effect, electronic structure is elaborated and reveals that the local atomic mismatch will result in a different spatial distribution of p orbitals in Bi atoms, thus inducing distinct electronic properties. These new findings demonstrate the potential usage in nanoelectronics and optoelectronics based on the nanoslab of bismuth oxychalcogenides, which opens up a promising way for realizing the manipulation on the band gap in semiconductor.

First-principles Study on Absolute Band Edge Positions for II–VI Semiconductors at (1 1 0) Surface

Revisiting the Zinc-Blende/Wurtzite Heterocrystalline Structure in CdS

Band Alignment Determination of Zno/Pbse Heterostructure Interfaces by Synchrotron Radiation Photoelectron Spectroscopy

Experimental Determination Of Valence Band Offset At Pbte/Cdte(111) Heterojunction Interface By X-Ray Photoelectron Spectroscopy

Structural and Electronic Properties of C-Bc2n Supper Hard Material: an Ab-Initio Study

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

First-principles Study on the Properties of GPBII(Al2CuMg)(001)and S(Al2CuMg)(001) Surfaces

Electronic Structure of III-V Zinc-Blende Semiconductors from First Principles

Absolute Surface Energies of Wurtzite (101¯1) Surfaces and the Instability of the Cation-Adsorbed Surfaces of II–VI Semiconductors

First Principles Calculation Study of Zn1-xMgxO/Cu2ZnSnS4 Heterointerface

Odd–Even Layer Effect of Bismuth Oxychalcogenide Nanosurfaces: A First-Principles Study

First-Principles Study of Mgb2 (0001) Surfaces

First principles calculation of electronic properties and effective mass of zinc-blende GaN

First Principle Study on Β-Sic(001)-(2×1) Surface Structure

In-depth Understanding of the Band Alignment and Interface States Scenario in Bi_2O_2Se/SrTiO_3 Ultrathin Heterojunction

First-principles Study of the Atomic and Electronic Structures of Pb on Si(001)

Translating XPS Measurement Procedure for Band Alignment into Reliable Ab-initio Calculation Method

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Intermediate-phase Method for Computing the Natural Band Offset Between Two Materials with Dissimilar Structures

Application of semi-ab initio method of band structure calculation to semiconductor superlattices

Communication: Surface Stability and Topological Surface States of Cleaved Bi2se3: First-Principles Studies