Abstract:ZnO is a direct wide-band gap semiconductor with WZ crystal structure. Due to the low growth tempera- ture and high exciton binding energy (60 meV) at room temperature, it is an ideal semiconductor material with blue light enission. As the development of semiconductor growth technology, high quality ZnO can be obtained, and the research in ZnO attracts much more attention again. In this paper, high quality ZnO thin films on sapphire substrate have been obtained by MOCVD system designed by ourselves. At the same time, the properties of annealed and doped ZnO films have been investigated in details, and good results have been achieved. According to the principle of MOCVD and in order to solve the problem in ZnO growth process, new-type plasma enhanced MOCVD system has been designed and fabricated. The precursors (DEZn and O_2) has been introduced into the reactor by two gas lines, respectively. And the precursors arrive to the surface of sapphire sub- strate by two separated special injectors. The substrate holder can be rotated at high speed and is uniformly heated by a special resistive heater. In order to balance the thermal flow, N_2 is introduced into the reactor uniformly from the upside of the reactor. All above design can reduced the pre-reaction of DEZn and O_2 during the ZnO growth and uniform ZnO films may be grown by this MOCVD system. Furthermore, the plasma generator has been added to the MOCVD system in order to improve doping efficiency during ZnO growth process and to obtain high resistivity or p-type ZnO films. High quality ZnO films have been firsly grown on sapphire substrate in optimized growth condition by MOCVD. At the same time, the doping properties of NH_3 in ZnO film grown on R-plane sapphire were also firstly investigated. After optimized the growth conditions, only〈110〉oriented ZnO film were obtained under NH_3 flux of 80 sccm. Furthermore, the FWHM of ZnO (110) XRD peak is only 0.50°. The AFM images sbow that the surface of the film is the most smooth. Up or low the flux, the surface will become rough and the crystal quality also de- creases. The Hall measurements show that the sample grown under NH_3 flux Of 50 sccm is low p-type conductor with the resisitivity 102Ω·cm, hole concentration + 1.69×10~(16)cm~(-3) and mobility 3.6cm~2·V~(-1)·s~(-1). The XPS spec- tra show that nitrogen and zinc atom forms N—Zn bond under NH_3 flux of 50 sccm. As the flux increase, some hy- drogen atom is introduced into ZnO film, and the conductivity change into n-type. The sample resistivity is up to 10~8Ω·cm under NH_3 flux of 80 sccm.

MOCVD preparation and properties of ZnO and Ni-doped ZnO films

Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Structure and Optical Properties of Ni-Doped Zno Films

Crystalline, optical and electrical properties of NiZnO thin films fabricated by MOCVD

The Influences Of Preparation Progress Of Al Doped Of Zno Films On Microstructure And The Optical And Electrical Properties By Mocvd Method

Multi-technique investigation of Ni-doped ZnO thin films on sapphire by metalorganic chemical vapor deposition

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Nitrogen doped ZnO thin films prepared by photo-assisted metal-organic chemical vapor deposition.

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Investigation of structural, morphological, and optical properties of (Ni/Co, Fe/Co, and Fe/Ni) co-doped ZnO thin films prepared by sol-gel spin coating technique

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Properties of Ni doped and Ni–Ga co-doped ZnO thin films prepared by pulsed laser deposition

Optical and structural characterization of aerosol-assisted CVD-grown Ni:ZnO thin films

Ni-Doping Effect on the Structural and Optical Properties of Sprayed ZnO Thin Films

Study on the Properties of ZnO Films Prepared by Photo-assisted MOCVD

Structural, Optical and Electrical Properties of Al–N Codoped ZnO Films by RF-assisted MOCVD Method

Effects of Ni concentration on structural, magnetic and optical properties of Ni-doped ZnO nanoparticles

Characteristics of Nitrogen Doped ZnO Film

Preparation and Photoelectric Properties of Zn-doped CdO Films by Sputtering

Structural, morphological and optical properties of atomic layer deposited transition metal (Co, Ni or Fe)- doped ZnO layers

Influence of Cu Dopant on the Structure and Optical Properties of ZnO Thin Films Prepared by MOCVD