Preparation and Photoelectric Properties of Zn-doped CdO Films by Sputtering

Shao-yu LIU,Wei ZHU

DOI: https://doi.org/10.16490/j.cnki.issn.1001-3660.2017.10.010

2017-01-01

Surface Technology

Abstract:The work aims to expand forbidden bandwidth and improve performance of CdO film by doping ZnO to it with-out affecting its electrical property. A series of Cd1-xZnxO transparent conductive films were deposited on glass substrate and silicon <111> substrate by adopting RF magnetron sputtering. Structure, optical and electrical properties of the films were tested by using XRD, UV spectrophotometer and Hall effect measuring instrument. The structure of films turned to 3 phases as the Zn doping content increased: RS (rock salt) phase ifx<0.25, mixed phase if 0.25<x<0.5, and WZ (wurtzite) phase if 0.5<x<1. After Zn doping, the absorption edge of the films could be increased to nearly 3 eV, and resistivity was 6.69×10-4 cm, carrier concen-tration was about 7.92×1020 cm-3, which was similar to electrical properties of CdO film. CdO film doped with a certain amount of ZnO can improve forbidden bandwidth without affecting its electrical properties, so that the film has good photoelectric properties.