RF Magnetron Sputtering Process and Photoelectric Property of A1 Doped ZnO Films

刘心宇,江民红,周秀娟,成钧,王仲民

DOI: https://doi.org/10.3969/j.issn.1001-4381.2008.10.054

2008-01-01

Journal of Materials Engineering

Abstract:Al-doped ZnO(ZAO) films were prepared on glass substrates at room temperature by RF magnetron sputtering.The microstructures of ZAO films were investigated with X-ray diffraction(XRD) and its optical and electrical properties were respectively measured using a four-point probe technique and UV-756 spectrophotometer at the room temperature.With increasing the sputtering time,the structure of ZAO films changes from non crystalline structure to crystalline structure,and at the same time the intensity of(002) peak changes,and the optical band gap of ZAO films reduces.But the optical band gap of the ZAO films increases after vacuum annealed at 400℃ for 2 h.The increasing of sputtering time and the annealing treatment make the transmittance of ZAO films reduce,but the transmittance of ZAO films is all higher than 90%.With increasing of sputtering time,the resistivity of films first reduces,and then increases slightly.The annealing treatment make the resistivity of ZAO films reduces evidently,and the ZAO film sample annealed for 2 h of sputtering time gains the lowest resistivity,9.4×10-4Ω·cm,and the lowest square resistance,18.80 Ω/□.