Abstract:<p>A series of m-plane ZnO films grown on sapphire and Si substrates with different thicknesses (186–371 nm) and different annealing temperatures (150–200 °C) were studied in detail by comparing X-ray diffraction, photoluminescence and spectroscopic ellipsometry measurements. The impact of thickness, annealing temperature and substrates on optical properties was investigated by the systematical analysis of the highly correlated stain, grain size, exciton effect, absorption tailing and crystallinity. Our finding indicates that the improvement of crystal quality along with the increase of grain size and refractive index for m-plane ZnO can be observed with increasing annealing temperature, increasing thickness or by introducing sapphire instead of Si substrate. The refractive index and bandgap have stronger dependence on annealing temperature than on thickness, causing the blue-shift of bandgap with rising annealing temperature despite thicker film. This bandgap shift is more pronounced for ZnO in ZnO/Si system. Photoluminescence combined with ellipsometry analysis demonstrate that higher annealing temperature can strengthen the excitonic feature. Bose-Einstein equation, employed to fit the dependence of bandgap on experimental temperature (300–583 K) illustrates that, the reduction of bandgap at elevated temperatures is more significant for ZnO in ZnO/sapphire system due to the corresponding stronger electron/exciton-phonon interactions involved with larger longitudinal optical phonon energies.</p>

Annealing Effects of Sapphire Substrate on the Structure and Properties of Zno Films Grown Via Pulsed Laser Deposition

Effects of Sapphire Substrate Annealing on ZnO Epitaxial Films Grown by MOCVD

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effect of Sapphire Substrate Pre-Treatment on the Growth of Zno Films

Substrate Effects on ZnO Nanostructure Growth Via Nanoparticle-Assisted Pulsed-Laser Deposition

Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline Zno Films Prepared by Plasma Assisted Pulsed Laser Deposition

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Effects of Annealing Atmosphere and Temperature on the Structure and Photoluminescence of ZnO Films Prepared by Pulsed Laser Deposition

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Effect of Annealing Temperature on the Microstructural and Electrical Properties of Epitaxial Ga-doped ZnO Film Deposited on C-Sapphire Substrate

Annealing Effect on ZnO Thin Films Grown by Laser-MBE

Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry

Influence of Annealing on Optical Properties of ZnO Film

Effects Of Annealing On Optical Properties Of Zn-Implanted Zno Thin Films

In Situ and Ex Situ Investigation on the Annealing Performance of the Zno Film Grown by Ion Beam Deposition

Study of the Optical Properties of Zno Thin Films Prepared by Laser Molecular Beam Epitaxy

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

Effects of Growth Temperature and Oxygen Pressure on the Properties of Heteroepitaxial Zno Thin Films on Sapphire (0001) Substrates by Pulsed Laser Deposition