Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

Determination of Equilibrium Distribution Coefficients of Impurities in Phosphorus by Vertical Zone-Melting Technique

Effect of the Impurity Ions on the Crystallization of Urea Phosphate

Determination of Trace Phosphorus in Cobalt-Niobium-zirconium Alloy by Inductively Coupled Plasma Atomic Emission Spectrometry

Study on the effective distribution coefficient of impurity separation in the preparation of high purity aluminum

Behavior of phosphorus during solidification of the Si-Fe-P ternary alloy melt used in purification of MG-Si

Thermodynamic Assessment of Phosphorus Removal From Si-Fe Levitated Droplets

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Impurity distribution in preparation of high-purity aluminum by vacuum zone melting

Kinetic Characterization of Phosphorus Removal from the Surface of Metallurgical Grade (mg) Silicon Droplets During Electromagnetic Levitation

Low-temperature enhancement in the extraction of phosphorus from metallurgical-grade silicon by simultaneously re-constructing phosphorus-rich phases of Ca3P2 and CaAl2Si2-P

The impurities distribution and purification efficiency of high-purity aluminum preparation by zone melting in vacuum

Effects of Fe(II)/P Ratio and Ph on Phosphorus Removal by Ferrous Salt and Approach to Mechanisms

Equilibrium segregation of phosphorus at grain boundaries of Fe–P, Fe–C–P, Fe–Cr–P, and Fe–Cr–C–P alloys

Study on the occurrence state of main components of phosphogypsum dihydrate and its impurity distribution

Removal efficiency of phosphorus by pyrite

Underestimation of phosphorus fraction change in the supernatant after phosphorus adsorption onto iron oxides and iron oxide-natural organic matter complexes

Calculating Models of Mass Action Concentration for Thermodynamic Properties of Phosphorus, Iron and Aluminum in Silicon Dilute Solutions

Development of a Polyaluminum Ferric Titanium Chloride for Phosphorous Removal in Water

Effect of impurity trappers on the distribution and removal of phosphorus from Si with Si-Cu solvent

Phosphorus Removal from Wastewater Using Electric Arc Furnace Slag Aggregate

On the Electronic Basis of the Phosphorus Intergranular Embrittlement of Iron