Origin of the Metallic to Insulating Transition of an Epitaxial Bi(111) Film Grown on Si(111)

Pang Fei,Liang Xue-Jin,Liao Zhao-Liang,Yin Shu-Li,Chen Dong-Min
DOI: https://doi.org/10.1088/1674-1056/19/8/087201
2010-01-01
Chinese Physics B
Abstract:Transport characteristics of single crystal bismuth films on Si(111)-7x7 are found to be metallic or insulating at temperature below or above T(C), respectively. The transition temperature T(C) decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than T(C).
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