Proton-Irradiation Induced Defects in Te-Doped Gasb Studied by Photoluminescence and Positron Annihilation Spectroscopy

Kai Zhou,Hui Li,Zhu Wang
DOI: https://doi.org/10.1142/s0217984910025024
2010-01-01
Modern Physics Letters B
Abstract:Proton-irradiation induced defects in Te -doped GaSb have been studied by photoluminescence (PL) and positron annihilation spectroscopy (PAS). A 2.6 MeV proton irradiation with fluences of 1×1014 cm-2, and 3×1015 cm-2 was used to produce defects in the Te -doped GaSb samples with free electron concentration of 1×1017 cm-3 and 1×1018 cm-3 respectively. The change of S parameters in Te -doped samples irradiated with different proton fluences, indicates that the defects induced by proton irradiation are most likely the V Ga -related defects. The PL spectra of Te -doped GaSb with different proton irradiation doses were measured at 77 K. The results show that the V Ga -related defects induced by proton irradiation are acceptors in Te -doped GaSb . We have also found that the dopant-induced vacancies which are related to Te have existed in unirradiated samples.
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