Abstract:Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. However, interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance. In this chapter, we present a technique to deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Organic spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR. Furthermore, we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer. We show that the resistance can be controlled by not only the spin alignment of the two ferromagnetic electrodes, but also by the electric polarization of the interfacial ferroelectric layer: the MR of the spin valve depends strongly on the history of the bias voltage which is correlated with the polarization of the ferroelectric layer; the MR even changes sign when the electric polarization of the ferroelectric layer is reversed. This new tunability can be understood in terms of the change of relative energy level alignment between ferromagnetic electrode and the organic spacer caused by the electric dipole moment of the ferroelectric layer. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multistate organic spin valves and shed light on the mechanism of the spin transport in organic spin valves.

Enhanced Spin Accumulation Obtained By Inserting Low-Resistance Mgo Interface In Metallic Lateral Spin Valves

Magneto-Transport Studies of Fe/Alq(3)/Co Organic Spin-Valves

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Response in Organic Spin Valves Based on La2/3sr1/3mno3 Electrodes

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Spin injection and spin accumulation in all-metal mesoscopic spin valves

Enhancement of spin accumulation in few-layer graphene lateral spin valve

Thermal spin injection and interface insensitivity in permalloy/aluminum metallic non-local spin valves

Giant Magnetoresistance Enhancement In Spin Valves With Nano-Oxide Layers

Effects of FM/NM Interfaces on Spin Accumulation in Free Layer of Pseudo-Spin-Valve Structure

A Specular Spin Valve with Discontinuous Nano-Oxide Layers

Negative Spin Valve effects in manganite/organic based devices

Manipulating Spin Injection into Organic Materials Through Interface Engineering

The In Situ Optimization of Spinterface in Polymer Spin Valve by Electronic Phase Separated Oxides

Effective Nonlocal Spin Injection Through Low-Resistance Oxide Junctions

Magnon Valve Effect Between Two Magnetic Insulators.

Enhancement of nonlocal spin-valve signal using spin accumulation in local spin-valve configuration

Determination Of The Potential Barrier At The Metal/Oxide Interface In A Specular Spin Valve Structure With Nano-Oxide Layers Using Electron Holography

Interface Engineering For Spin Injection, Detection And Manipulation In Alq(3)-Based Organic Spin Valves

Spin transfer torque enhancement in dual spin valve in the ballistic regime