First principle study on hydroxylated SiC sheet
Gao Ben-Ling,Wang Bao-Lin,Xiong Shi-Jie
DOI: https://doi.org/10.13232/j.cnki.jnju.2011.01.011
2011-01-01
Abstract:By using density functional theory we have studied the electronic and magnetic properties of the hydroxylated SiC sheet.The studied SiC sheet belongs to hexagonal honeycomb structure,in which the ratio of C to Si is 1∶1 and each carbon atom alternates with each silicon atom.Different from grapheme which only includes one element:carbon atoms,there are two kinds of inequivalent sites in SiC sheet:carbon and silicon,and so we study two cases of half-hydroxylation:one is that all carbon atoms are hydroxylated and the other means that all silicon atoms are hydroxylated.And the results show rich electronic and magnetic phenomena.In these two cases of hydroxylation,different from unhydroxylated pristine SiC sheet,carbon and silicon atoms in hydroxylated SiC sheet do not locate at the same plane due to attractive interaction of hydroxyls with hydroxylated atoms,in which the distances between carbon layer and silicon layer are 0.671 and 0.390 corresponding to the case of carbon atoms with hydroxylation and that of silicon atoms with hydroxylation,respectively,the lengths of carbon-silicon bond being lengthened to reach 1.904 、1.861 and the corresponding angles of C-O-H and Si-O-H bonds are 107.8°and 114.1°,and these display fancy geometric structure characteristics.For unit cell,formation energy resulting from hydroxylation are,respectively,-0.70 eV for SiC sheet with C atoms hydroxylated,and-2.15 eV with Si atoms hydroxylated,demonstrating that the process of hydroxylation for SiC sheet is an exothermic reaction and easy to be realized.In order to explore the most magnetic state,three magnetic configurations including in ferromagnetic coupling,anti-ferromagnetic coupling and nonmagnetic coupling are considered.A non-magnetic normal metal emerges when all carbon atoms in SiC sheet are hydroxylated,while it exhibits a antiferromagnetic semiconductor with a direct band gap of 1.12 eV appearing at G(0,0,0) point in Brillouin zone when all silicon atoms in SiC sheet are hydroxylated.According to the calculation for total energies,it is found that the total energy for the case with silicon atoms hydroxylated is lower than that for the case with carbon atoms hydroxylated,indicating that silicon-hydroxylated SiC sheet is more stable.The p orbits in the unhydroxylated atoms for both kinds of hydroxylated SiC sheet play an important part in the corresponding non-magnetic metal and antiferromagnetic semiconductor properties.This shows that controlling the hydroxylation on different atom sites can effectively modulate the electronic and magnetic properties of the hydroxylated SiC sheet:the metal character is obtained if the carbon atoms are hydroxylated,but the direct band-gap semiconductor with antiferromagnetism is done if the silicon atoms are hydroxylated.And it endows the hydroxylated SiC sheet the possible potential application in the future functional nanodevices.