Abstract:By using density functional theory we have studied the electronic and magnetic properties of the hydroxylated SiC sheet.The studied SiC sheet belongs to hexagonal honeycomb structure,in which the ratio of C to Si is 1∶1 and each carbon atom alternates with each silicon atom.Different from grapheme which only includes one element:carbon atoms,there are two kinds of inequivalent sites in SiC sheet:carbon and silicon,and so we study two cases of half-hydroxylation:one is that all carbon atoms are hydroxylated and the other means that all silicon atoms are hydroxylated.And the results show rich electronic and magnetic phenomena.In these two cases of hydroxylation,different from unhydroxylated pristine SiC sheet,carbon and silicon atoms in hydroxylated SiC sheet do not locate at the same plane due to attractive interaction of hydroxyls with hydroxylated atoms,in which the distances between carbon layer and silicon layer are 0.671  and 0.390  corresponding to the case of carbon atoms with hydroxylation and that of silicon atoms with hydroxylation,respectively,the lengths of carbon-silicon bond being lengthened to reach 1.904 、1.861  and the corresponding angles of C-O-H and Si-O-H bonds are 107.8°and 114.1°,and these display fancy geometric structure characteristics.For unit cell,formation energy resulting from hydroxylation are,respectively,-0.70 eV for SiC sheet with C atoms hydroxylated,and-2.15 eV with Si atoms hydroxylated,demonstrating that the process of hydroxylation for SiC sheet is an exothermic reaction and easy to be realized.In order to explore the most magnetic state,three magnetic configurations including in ferromagnetic coupling,anti-ferromagnetic coupling and nonmagnetic coupling are considered.A non-magnetic normal metal emerges when all carbon atoms in SiC sheet are hydroxylated,while it exhibits a antiferromagnetic semiconductor with a direct band gap of 1.12 eV appearing at G(0,0,0) point in Brillouin zone when all silicon atoms in SiC sheet are hydroxylated.According to the calculation for total energies,it is found that the total energy for the case with silicon atoms hydroxylated is lower than that for the case with carbon atoms hydroxylated,indicating that silicon-hydroxylated SiC sheet is more stable.The p orbits in the unhydroxylated atoms for both kinds of hydroxylated SiC sheet play an important part in the corresponding non-magnetic metal and antiferromagnetic semiconductor properties.This shows that controlling the hydroxylation on different atom sites can effectively modulate the electronic and magnetic properties of the hydroxylated SiC sheet:the metal character is obtained if the carbon atoms are hydroxylated,but the direct band-gap semiconductor with antiferromagnetism is done if the silicon atoms are hydroxylated.And it endows the hydroxylated SiC sheet the possible potential application in the future functional nanodevices.

First principle study on hydroxylated SiC sheet

Ferromagnetic And Antiferromagnetic Properties Of The Semihydrogenated Sic Sheet

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals

Ferromagnetic and Antiferromagnetic Properties of the Fluorinated Bilayer SiC Sheets

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

A New Metastable Metallic Silicon Allotrope

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Theoretical study of hydrogenated 3C–SiC(001)-(2×1) surface

First-Principles Study of Metal Impurities in Silicon Carbide: Structural, Magnetic, and Electronic Properties

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

Theoretical study on thermal properties of molybdenum disulfide/silicon heterostructures

A theoretical study of the electronic properties of hydrogenated spherical‐like SiC quantum dots with C ‐rich and Si ‐rich compositions

Effects of Biaxial Strain and Functional Groups on SiC/ti(3)C(2) Heterostructure: a First Principle Calculation

Multi-scale quantitative study on dielectric properties of C–S–H synthesized by different molar ratio of Ca/Si

Study on Electronic Structure and Optical Property of Silicon Doped with Transition Metal by First Principles

Tunable electrical and magnetic properties of 2D SiC via adsorption and doping of atmospheric elements (H, C, N, and O)