Abstract:By using density functional theory we have studied the electronic and magnetic properties of the hydroxylated SiC sheet.The studied SiC sheet belongs to hexagonal honeycomb structure,in which the ratio of C to Si is 1∶1 and each carbon atom alternates with each silicon atom.Different from grapheme which only includes one element:carbon atoms,there are two kinds of inequivalent sites in SiC sheet:carbon and silicon,and so we study two cases of half-hydroxylation:one is that all carbon atoms are hydroxylated and the other means that all silicon atoms are hydroxylated.And the results show rich electronic and magnetic phenomena.In these two cases of hydroxylation,different from unhydroxylated pristine SiC sheet,carbon and silicon atoms in hydroxylated SiC sheet do not locate at the same plane due to attractive interaction of hydroxyls with hydroxylated atoms,in which the distances between carbon layer and silicon layer are 0.671  and 0.390  corresponding to the case of carbon atoms with hydroxylation and that of silicon atoms with hydroxylation,respectively,the lengths of carbon-silicon bond being lengthened to reach 1.904 、1.861  and the corresponding angles of C-O-H and Si-O-H bonds are 107.8°and 114.1°,and these display fancy geometric structure characteristics.For unit cell,formation energy resulting from hydroxylation are,respectively,-0.70 eV for SiC sheet with C atoms hydroxylated,and-2.15 eV with Si atoms hydroxylated,demonstrating that the process of hydroxylation for SiC sheet is an exothermic reaction and easy to be realized.In order to explore the most magnetic state,three magnetic configurations including in ferromagnetic coupling,anti-ferromagnetic coupling and nonmagnetic coupling are considered.A non-magnetic normal metal emerges when all carbon atoms in SiC sheet are hydroxylated,while it exhibits a antiferromagnetic semiconductor with a direct band gap of 1.12 eV appearing at G(0,0,0) point in Brillouin zone when all silicon atoms in SiC sheet are hydroxylated.According to the calculation for total energies,it is found that the total energy for the case with silicon atoms hydroxylated is lower than that for the case with carbon atoms hydroxylated,indicating that silicon-hydroxylated SiC sheet is more stable.The p orbits in the unhydroxylated atoms for both kinds of hydroxylated SiC sheet play an important part in the corresponding non-magnetic metal and antiferromagnetic semiconductor properties.This shows that controlling the hydroxylation on different atom sites can effectively modulate the electronic and magnetic properties of the hydroxylated SiC sheet:the metal character is obtained if the carbon atoms are hydroxylated,but the direct band-gap semiconductor with antiferromagnetism is done if the silicon atoms are hydroxylated.And it endows the hydroxylated SiC sheet the possible potential application in the future functional nanodevices.

Ferromagnetic and Antiferromagnetic Properties of the Fluorinated Bilayer SiC Sheets

Ferromagnetic And Antiferromagnetic Properties Of The Semihydrogenated Sic Sheet

Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds

First principle study on hydroxylated SiC sheet

Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

A novel 2D intrinsic metal-free ferromagnetic semiconductor Si3C8 monolayer

Magnetic Properties of Two Dimensional Silicon Carbide Triangular Nanoflakes-Based Kagome Lattices

High-temperature ferromagnetism and ferroelasticity in ultraflexible atomically thin square-shaped lattices

Interlayer coupling, electronic and optical properties of few-layer silicon carbide nanosheets

Electronic structure and bonding in epitaxially stabilized cubic iron silicides

Room-Temperature Ordered Spin Structures in Cluster-Assembled Single V@Si 12 Sheets

Bethe-Slater-curve-like behavior and interlayer spin-exchange coupling mechanisms in two-dimensional magnetic bilayers

Structural evolution, interlayer coupling, band-gap, and optical properties of non-layered SiCNSs

Ferromagnetic and Half-Metallic Fec2 Monolayer Containing C-2 Dimers

Ab Initio Study Of Electronic And Optical Behavior Of Two-Dimensional Silicon Carbide

Ferromagnetism And Nonmetallic Transport Of Thin-Film Alpha-Fesi2: A Stabilized Metastable Material

The Effects of Fluorination and Hydrogenation on the Physical Properties of Two-Dimensional (111)-Oriented Cubic Boron Nitride Nanosheets

Sin-Sic Nanofilm: A Nano-Functional Ceramic with Bipolar Magnetic Semiconducting Character

Ferromagnetism in fluoride-antimonide SrF(Zn1-2xMnxCux)Sb with a quasi two dimensional structure

Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons

Bethe-Slater-Curve Like Behavior in Double Super-Exchange Governed Two-Dimensional Magnetic Bilayers