Magnetotransport in hybrid InSe/monolayer graphene on SiC
Chih-Yuan Wang,Yun-Wu Lin,Chiashain Chuang,Cheng-Hsueh Yang,Dinesh K Patel,Sheng-Zong Chen,Ching-Chen Yeh,Wei-Chen Chen,Chia-Chun Lin,Yi-Hsun Chen,Wei-Hua Wang,Raman Sankar,Fang-Cheng Chou,Mattias Kruskopf,Randolph E Elmquist,Chi-Te Liang
DOI: https://doi.org/10.1088/1361-6528/abd726
IF: 3.5
2021-01-25
Nanotechnology
Abstract:Abstract The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron–electron (e–e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (ln T ) dependence of the Hall slope R H = δR xy / δB = δρ xy / δB can be used to probe e–e interaction effects at various temperatures even when the measured resistivity does not show a ln T dependence due to strong electron–phonon scattering. Nevertheless, one needs to be certain that the change of R H is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology