On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method
Zhigang Yin,Nuofu Chen,Ruixuan Dai,Lei Liu,Xingwang Zhang,Xiaohui Wang,Jinliang Wu,Chunlin Chai
DOI: https://doi.org/10.1016/j.jcrysgro.2007.04.043
IF: 1.8
2007-01-01
Journal of Crystal Growth
Abstract:Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378nm, and a much suppressed orange emission centered at ∼590nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products.