Abstract:The focal plane of Athena's WFI consists of spectroscopic single photon X-ray detectors that contain arrays of DEPFETs (DEpleted P-channel Field-Effect Transistor) as well as ASICs that are used for steering, readout and analog signal shaping. These components have to be examined regarding the effect of ionizing radiation. A Total Ionizing Dose (TID) test was done with prototype detector modules with 64x64 DEPFETs and one SWITCHER and VERITAS ASIC each. The current design of the WFI detector head features a proton shield equivalent to 4 cm of aluminum in order to prevent a strong increase of leakage current in the fully depleted 450 $\mu$m thick bulk of the sensor. This keeps the expected doses and dose rates during the nominal mission relatively low ($\sim$5 Gy). It is nevertheless important to study the current system in a dedicated TID test in order to exclude unforeseen effects and to study any radiation related changes that can have an effect on the very sensitive readout chain and the detector performance. The combination of low doses, low dose rates, low operating temperature (<-60°C) but high sensitivity on small changes of the threshold voltages represent somehow unusual boundary conditions in comparison to TID tests for standard radiation hard electronic components. Under these circumstances it was found beneficial to do the test in our own laboratory with an X-ray source in order to realize irradiation during nominal operation conditions. Furthermore, it facilitated to take annealing effects into account. Reasonably accurate dosimetry is achieved by measuring the X-ray spectrum and intensity with the device under test. After irradiation to a total dose of 14 Gy and subsequent annealing the threshold voltage of the DEPFETs were shifted by a mean value of 80 mV, the performance remained unchanged apart from a slight increase in readout noise by 10%.

A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs

New method to evaluate the total dose radiation effect of MOS devices

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

The Effect of the Boron-Ions Implantation on the Performance of RADFETs

The influences of radiation effects on DC/RF performances of L g = 22 nm gate-all-around nanosheet field-effect transistor

Study of the Dose Rate Effect of 180 Nm Nmosfets

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

Investigating the effects of different gate biasing voltages and temperatures on RadFETs

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

Total ionizing dose test with DEPFET sensors for Athena's WFI

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide

Study of the Features of 400nm IMPL RADFET Dosimeter

Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor