Abstract:Formation of a peculiar lasing pattern leading to a TEM00 -like mode accompanied by a nonzero bright outer-ring emission (namely, a modified TEM00 mode) was observed in a 300- μm -thick LiNdP4O12 laser with reflective flat end mirrors that was pumped with a laser diode whose focused spot size was larger than the lasing-beam spot size determined by the thermal lens effect. The photon lifetimes of the laser oscillations were found to be greatly shortened to τp=6.74ps as compared with those in pure TEM00 mode operation, while the fluorescence lifetime was τ=130μs . The formation of the peculiar transverse mode was theoretically treated in terms of the pump-intensity-dependent thermal lens effect, which yields the lasing-beam spot sizes in the resultant optical cavity. In addition, transverse spatial hole burning of population inversions due to the preceding transverse eigenmode intensity and the associated antiguidance of the pure TEM00 field leading to formation of the TEM00 with an emergent outer-ring emission was shown to appear with increasing pump power through the electric lens (i.e., population lens) effect, in which almost all of the population inversion contributes to lasing with a pronounced effective modal gain. Self-mixing laser Doppler velocimetry (LDV) experiments and numerical simulations revealed that spontaneous emission factors in the peculiar mode oscillations were greatly decreased in comparison with those in pure TEM00 mode operation. The present thin-slice solid-state laser possessing a large fluorescence-to-photon lifetime and decreased spontaneous emission factor enabled us to detect LDV signals in the regime of a few feedback photons per observation period. https://doi.org/10.1103/PhysRevA.106.053504 ©2022 American Physical Society

Physicals picture for discontinuous electrical behaviors of LDs at lasing threshold

Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism

Theoretical Analysis of Thermal-Lensing Effect in a High Power Exciplex Pumped Cs Vapor Laser.

Experimental study of excitation efficiency distribution in low-voltage-driven thin film electroluminescent devices

The Electrical Turn-on Characteristics of Vertical-Cavity Surface-Emitting Lasers

Sudden Change of Electrical Characteristics at Lasing Threshold of a Semiconductor Laser

Competitive Behavior of Photons Contributing to Junction Voltage Jump in Narrow Band-Gap Semiconductor Multi-Quantum-well Laser Diodes at Lasing Threshold

Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes

Stimulated Emission Related Anomalous Change Of Electrical Parameters At Threshold In Gan-Based Laser Diodes

Investigation of Loss and Threshold Characteristics in the Laser Diode with External Feedback

Unveiling sub-bandgap energy-level structures on machined optical surfaces based on weak photo-luminescence

Deep Saturation of Junction Voltage at Large Forward Current of Light-Emitting Diodes

Analytical Models of Electron Leakage Currents in Gallium Nitride-Based Laser Diodes and Light-Emitting Diodes

Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

Stimulated Emission in Gan-Based Laser Diodes Far below the Threshold Region

High Mobility Organic Lasing Semiconductor with Crystallization‐Enhanced Emission for Light‐Emitting Transistors

Laser-induced damage thresholds of ultrathin targets and their constraint on laser contrast in laser-driven ion acceleration experiments

Emerging Low-Dimensional Materials for Nonlinear Optics and Ultrafast Photonics

Self-mixing interference in a thin-slice solid-state laser with few feedback photons per observation period

Laser-induced damage thresholds of ultrathin targets and their constrain on laser contrast in laser-driven ion acceleration experiments

Investigation On Transient Catastrophic Optical Damage In High Power Aigaas/Gaas Laser Diodes