High Mobility Organic Lasing Semiconductor with Crystallization‐Enhanced Emission for Light‐Emitting Transistors

Dan Liu,Qing Liao,Qian Peng,Haikuo Gao,Qi Sun,Jianbo De,Can Gao,Zhagen Miao,Zhengsheng Qin,Jiaxin Yang,Hongbing Fu,Zhigang Shuai,Huanli Dong,Wenping Hu
DOI: https://doi.org/10.1002/anie.202108224
2021-01-01
Angewandte Chemie International Edition
Abstract:AbstractThe development of high mobility organic laser semiconductors with strong emission is of great scientific and technical importance, but challenging. Herein, we present a high mobility organic laser semiconductor, 2,7‐diphenyl‐9H‐fluorene (LD‐1) showing unique crystallization‐enhanced emission guided by elaborately modulating its crystal growth process. The obtained one‐dimensional nanowires of LD‐1 show outstanding integrated properties including: high absolute photoluminescence quantum yield (PLQY) approaching 80 %, high charge carrier mobility of 0.08 cm2 V−1 s−1, Fabry‐Perot lasing characters with a low threshold of 86 μJ cm−2and a high‐quality factor of ≈2400. Furthermore, electrically induced emission was obtained from an individual LD‐1 crystal nanowire‐based light‐emitting transistor due to the recombination of holes and electrons simultaneously injected into the nanowire, which provides a good platform for the study of electrically pumped organic lasers and other related ultrasmall integrated electrical‐driven photonic devices.
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