Abstract:Amorphous SiOx（0≤x≤2.0）films were deposited at 300℃ by plasma-enhanced chemical vapor deposition（PECVD）using SiH4-O2 mixtures.The properties of infrared (IR) absorption for Si—O—Si bonds have been investigated.Two characteristic absorption peaks at around 1050 and 1150cm-1 arise from Si—O—Si stretching mode，and one absorption peak at around 800cm-1 from Si—O—Si bending mode.It is found that Isum/NSi ratio,of the sum of the absorption intensities for both 1000 and 1150cm-1 bands to the density of Si atoms increases linearly with x when x increasing from 0 to 2.0.The proportionality coefficient ASiO(inverse of the oscillator strength) of the Si—O—Si stretching mode is obtained to be 1.48×1019cm-2.On the other hand，the apparent absorbance αapp,in a-SiO2 films is found linear with the increasing film thickness d as αapp=kd,for both 800cm-1 and 1050cm-1 bands.The proportionality coefficients k for 800 and 1050cm-1 bands are obtained to be 3.2×103 and 2.9×104cm-1.By comparison with the values of k reported in other papers,it indicates that k value is closely related to the film density.With the values of ASiO and k above-mentroned,the O content in a-SiOx∶H and film thickness for a-SiO2 can be determined nondestructively using IR absorption techniques.

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Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Properties of plasma-deposited amorphous SiO2 films

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A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Photothermal Elastic Vibration Method: Investigation of the Micro-Electro-mechanical-systems

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Study Of Laser Excited Vibration Of Silicon Cantilever

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Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Laser-Excited Electronic and Thermal Elastic Vibrations in a Semiconductor Rectangular Plate

Study of Photothermal Vibrations of Semiconductor Cantilevers Near the Resonant Frequency

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Study on Optical Anisotropy Properties of SiO2 Films with Different Thermal Annealing Temperatures

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A Laboratory Study of Photothermal Excited Silicon Microresonators with Coated Film

Correlation Between Temperature Coefficient of Elasticity and Fourier Transform Infrared Spectra of Silicon Dioxide Films for Surface Acoustic Wave Devices

Anelastic Internal Friction and Mechanical Spectroscopy of SiO2/Si Wafers