Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits

Yanfeng Li,Nadia Rezzak,En Xia Zhang,Ronald D. Schrimpf,Daniel M. Fleetwood,Jingqiu Wang,Donglin Wang,Yanjun Wu,Shuang Cai
DOI: https://doi.org/10.1109/tns.2010.2086478
IF: 1.703
2010-01-01
IEEE Transactions on Nuclear Science
Abstract:Space applications using advanced foundry processes require device models that accurately include the dependence of total-ionizing dose (TID) response on process variability and layout. An automated flow is described for TID-aware process design kit generation using new test chips, modeling, and simulation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
What problem does this paper attempt to address?