Including the effects of process-related variability on radiation response using a new test chip
Yan Li,Nadia Rezzak,Ronald D. Schrimpf,Daniel M. Fleetwood,Enxia Zhang,Yanjun Wu,Shuang Cai,Jingqiu Wang,Donglin Wang
DOI: https://doi.org/10.1109/ICSICT.2010.5667408
2010-01-01
Abstract:Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
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