Abstract:Pb(Zr0.4Ti0.6)O-3 thin films with a thickness of 500 nm were spin coated on (110) preferred Pt bottom electrodes using a sol-gel method, in which the (110) preferred Pt bottom electrode was developed by using a (100)-oriented conductive oxide electrode LaNiO3 film as an adhesion layer on a SiO2/Si substrate. X-ray diffraction analysis and field emission scanning electron microscopy show that the as-grown Pb(Zr0.4Ti0.6)O-3 films are highly (110)-oriented with a columnar structure. It indicates that the (110) preferred Pt bottom electrode is effective for growing highly (110)-oriented Pb(Zr0.4Ti0.6)O-3 films. The as-grown Pb(Zr0.4Ti0.6)O-3 films show excellent dielectric and ferroelectric properties with dielectric constant epsilon(T)(33)/epsilon(0)=1620, loss tangent tan delta=2.1%, spontaneous polarization 2P(s)=158 mu C/cm(2), and remnant polarization 2P(r)=92 mu C/cm(2). Excellent pyroelectric properties are also detected in the (110)-oriented films. At room temperature, the pyroelectric coefficient and the figure of merit for detectivity can reach up to 7.8x10(-4) C m(-2) K-1 and 1.79x10(-5) Pa-0.5, respectively. (c) 2007 American Institute of Physics.

Low Temperature Preparation and Electric Properties of Highly (100)-Oriented Pb0.8 La0.1Ca0.1Ti0.975O3 Thin Films Prepared by a Sol–gel Route

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Enhanced Performance of Pb0.8la0.1ca0.1ti0.975o3/Pb(Nb0.01zr0.2ti0.8)O-3 Multilayer Thin Films for Pyroelectric Applications

Crystallization Behaviors and Electric Properties of (pb0.8ca0.2)tio3 Thin Films Prepared by a Sol–gel Route

Low-temperature Crystallization and Orientation Evolution of Nb-doped Pb(Zr,Ti)O3 Thin Films Using a Pb0.8Ca0.1La0.1Ti0.975O3 Seed Layer

Thickness Scaling and Electric Properties of Highly (111) Oriented Nb-doped Pb(Zr,Ti)O 3 Thin Film Prepared at Low Temperature by a Sol–gel Route

Low Temperature Preparation and Electric Properties of Highly (100)-Oriented (na0.85k0.15)0.5bi0.5tio3 Thin Films Prepared by a Sol–gel Route

Microstructure and Electrical Properties of Lead Zirconate Titanate Thin Films Deposited by Sol-Gel Method on La 0.7 Sr 0.3 MnO 3 /sio 2 /si Substrate

Enhanced Performance of Sandwich Structure Pb0.8La0.1Ca0.1Ti0.975O3 Thin Film for Pyroelectric Applications

Structure and Dielectric Properties of Highly (100)-Oriented PST Thin Films Deposited on MgO Substrates

Study of Nanoscale Banded 90° Domain Patterns and Pyroelectric Properties in (111) Oriented (pb,la)tio3 Thin Films

Microstructures and Electric Properties of Highly (111)-Oriented Nb-Doped Pb(Zr-0.2,Ti-0.8)O-3 Films with Pb0.8la0.1ca0.1ti0.975o3 Seed Layer

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Effect of Orientation on the Dielectric Properties of Pb0.97la0.02zr0.95ti0.05o3 (plzt) Antiferroelectric Thin Films

Effects of annealing temperature on structure and electrical properties of sol–gel derived 0.65PMN-0.35PT thin film

Effect of pyrolysis temperature on preferential orientation and electrical properties of sol-gel derived lead zirconate titanate films

Interface Optimization and Electrical Properties of 0.5ba(zr0.2ti0.8)o3–0.5(ba0.7ca0.3)tio3 Thin Films Prepared by a Sol–Gel Process

A Facile Hot Plate Annealing at Low Temperature of Pb(Zr0.52Ti0.48)O3 Thin Films by Sol–gel Method and Their Ferroelectric Properties

Study on Properties of Pb_(1-x)La_xTiO_3 Thin Films Prepared by Sol -Gel

Interface diffusion and pyroelectric properties of Pb 0.8 La 0.1 Ca 0.1 Ti 0.975 O 3 /(Na 0.85 K 0.15 ) 0.5 Bi 0.5 TiO 3 hierarchical composite thin films

Ferroelectric And Pyroelectric Properties Of Highly (110)-Oriented Pb(Zr0.40ti0.60)O-3 Thin Films Grown On Pt/Lanio3/Sio2/Si Substrates