The Effect of N-2 Flow Rate on Discharge Characteristics of Microwave Electron Cyclotron Resonance Plasma

Wan-Yu Ding,Jun Xu,Wen-Qi Lu,Xin-Lu Deng,Chuang Dong
DOI: https://doi.org/10.1063/1.3126963
IF: 2.2
2009-01-01
Physics of Plasmas
Abstract:The properties of plasma in Ar/N-2 microwave electron cyclotron resonance discharge with a percentage of N-2 flow rate ranging from 5% to 50% have been studied in order to understand the effect of N-2 flow rate on the mechanical properties of silicon nitride films. N-2(+) radicals as well as N-2, N+ are found by optical emission spectroscopy analysis. The evolution of plasma density, electron kinetic energy, N-2(+), N-2, and N+ emission lines from mixed Ar/N-2 plasma on changing mixture ratio has been studied. The mechanisms of their variations have been discussed. Moreover, an Ar/N-2 flow ratio of 2/20 is considered to be the best condition for synthesizing a-Si3N4, which has been confirmed in the as-deposited silicon nitride films with quite good mechanical properties by nanoindentation analyses.
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