Abstract:The resistive switching interface is promising for building random access memory devices with electroforming-free characteristics, rectification functionality and highly reproducible resistive switching performance. The electronic structures of the resistive switching interface are important not only from a fundamental point of view, but also from the fascinating perspective of interface engineering for high performance devices. However, the electronic properties of typical resistive switching interfacial structures at an atomic level are less well understood, compared to those of bulky resistive switching structures. In this work, we study the electronic structures of two typical resistive switching interfacial structures, TiO 2 /Ti 4 O 7 and Ta 2 O 5 /TaO 2 , using the screened exchange (sX-LDA) functional. We uncover that the system Fermi energies of both interfaces are just above the conduction band edge of the corresponding stoichiometric oxides. According to the defect charge transition levels, the oxygen vacancy is stabilized at the −2 charged state in Ta 2 O 5 and TiO 2 where the switching takes place. However, it is desirable for the +2 charged oxygen vacancy to be stabilized to achieve controlled resistive switching under the electrical field. We propose to introduce interfacial dopants to shift the system Fermi energies downward so that the +2 charged oxygen vacancy can be stable. Several dipole models are presented to account for the ability of the Fermi level to shift due to the interfacial dopants. These methods are readily applicable to interface engineering for high performance devices.

Role Of Taon Interface For Cuxo Resistive Switching Memory Based On A Combined Model

Different Interface Role in Cuox Based Rram

Study of the Bipolar Resistive‐switching Behaviors in Pt/GdOx/TaNx Structure for RRAM Application

Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

Temperature and Electrode-Size Dependences of the Resistive Switching Characteristics of CuOx Thin Films

The Improved Resistive Switching Properties of TaOx-based RRAM Devices by Using WNx As Bottom Electrode

Modulation of Nonlinear Resistive Switching Behavior of A Taox-Based Resistive Device Through Interface Engineering

A Study of Copper Oxide Based Resistive Switching Memory by Conductive Atom Force Microscope

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

High Speed and Multi-Level Resistive Switching Capability of Ta2O5 Thin Films for Nonvolatile Memory Application

Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Characteristics and Transport Mechanisms of Triple Switching Regimes of TaOx Memristor

Ab Initio Modeling Of Resistive Switching Mechanism In Binary Metal Oxides

Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu / ZrO 2 / Pt devices

Resistive Memory Switching Of Cuxo Films For A Nonvolatile Memory Application

Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

Multilevel Resistance Switching in Cu/Taox/Pt Structures Induced by A Coupled Mechanism

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits

Endurance Enhancement Of Cu-Oxide Based Resistive Switching Memory With Al Top Electrode