Abstract:Ge–Sb–Te alloys are widely used for data recording based on the rapid and reversible amorphous-to-crystalline phase transformation that is accompanied by increases in the optical reflectivity and the electrical conductivity. However, uncertainties about the optical band gaps and electronic transport properties of these phases have persisted because of inappropriate interpretation of reported data and the lack of definitive analytical studies. In this paper we characterize the most widely used composition, Ge2Sb2Te5, in its amorphous, face-centered-cubic, and hexagonal phases, and explain the origins of inconsistent or unphysical results in previous reports. The optical absorption in all of these phases follows the relationship αhν∝(hν−Egopt)2, which corresponds to the optical transitions in most amorphous semiconductors as proposed by Tauc, Grigorovici, and Vancu [Tauc et al., Phys. Status Solidi 15, 627 (1966)], and to those in indirect-gap crystalline semiconductors. The optical band gaps of the amorphous, face-centered-cubic, and hexagonal phases are 0.7, 0.5, and 0.5eV, respectively. The subgap absorption in the amorphous phase shows an exponential decay with an Urbach slope of 81meV. We measured the photoconductivity of amorphous Ge2Sb2Te5 and determined a mobility-lifetime product of 3×10−9cm2∕V. The spectral photoconductivity shows a threshold at about 0.7eV, in agreement with our analysis of the optical band gap. The face-centered-cubic and hexagonal phases are highly conductive and do not show freeze-out; even at 5K the density of free carriers remains at 1019–1020cm−3, so these are degenerate semiconductors in which the Fermi level resides inside a band. In the hexagonal phase, the effect of free electrons on the Hall coefficient is significant at high temperatures. When the Hall data are fitted using the two-carrier analysis, the hole mobility is found to decrease slowly with temperature, as expected. The considerations discussed in this paper can be readily applied to study related chalcogenide materials.

A Body-Centered-Cubic Polymorph of the Ge2sb2te5 Phase Change Alloy

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Pressure-induced Reversible Amorphization and an Amorphous–amorphous Transition in Ge 2 Sb 2 Te 5 Phase-Change Memory Material

Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge <sub>2</sub> Sb <sub>2</sub> Te <sub>5</sub> phase-change memory material

Superconductivity in multiple phases of compressed GeSb2Te4

Direct Observation Of Partial Disorder And Zipperlike Transition In Crystalline Phase Change Materials

New Structural Picture of Thege2sb2te5phase-Change Alloy

Direct observation of metastable face-centered cubic Sb 2 Te 3 crystal

Pressure Induced Short-Range Structural Changes in Supercooled Liquid Ge2Sb2Te5

Investigation on Ge 5− x Sb x Te 5 phase-change materials by first-principles method

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

The Origin of Hexagonal Phase and Its Evolution Process in Ge2Sb2Te5 Alloy

Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge$_{2}$Sb$_{2}$Te$_{5}$

Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge2Sb2Te5

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Metastable Stacking-Polymorphism in Ge2Sb2Te5.

Nature Of Atomic Bonding And Atomic Structure In The Phase-Change Ge2sb2te5 Glass

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials