Abstract:The ferroelectric capacitance is usually nonlinear against increasing/decreasing voltage in sweeping time longer than 1 s and achieves a maximum value at around a coercive voltage within each loop. With the improved short-pulse measurements, we estimated the differential capacitance of ferroelectric Au/BiFeO3/LaNiO3/SrTiO3 thin-film capacitors from a nanosecond discharging current induced by a delta voltage after a stressing voltage pulse with widths of 500 ns–50 ms. With the shortening of the voltage sweeping time, we clearly observed two capacitance maxima from each branch of a capacitance-voltage (C-V) loop, reminiscent of an antiferroelectric behavior. After transformation of nanosecond domain switching current transients under pulses into polarization–voltage hysteresis loops, we further measured time dependent polarization retention as well as imprint in the range of 100 ns–1 s. Both positive and negative polarizations decay exponentially at characteristic times of 2.25 and 198 μs, suggesting the coexistence of preferred domains pointing to top and bottom electrodes in most epitaxial films. This exponential time dependence is similar to the dielectric degradation under a dc voltage, and the polarization retention can be improved through long-time opposite voltage stressing. With this improvement, the additional antiferroelectric-like dielectric maximum within each branch of a C-V loop disappears. This experiment provides the strong evidence of the effect of time-dependent charge injection on polarization retention and dielectric degradation.

Congruent Charge-Injection Spectrum from Independent Measurements of Fatigue and Imprint in Ferroelectric Thin Films

Charge Injection and Polarization Fatigue in Ferroelectric Thin Films

Unsaturated Charge Injection at High-Frequency Fatigue of Pt∕Pb(Zr,Ti)O3∕Pt Thin-Film Capacitors

Charge Injection Controlled Capacitance Degradation in Ferroelectric Thin Films

Nanosecond-range Measurements of Imprint Effect for Pt∕IrO2∕Pb(Zr0.4Ti0.6)O3∕IrO2∕Pt Thin-Film Capacitors

Reversible Charge Injection in Antiferroelectric Thin Films

Evidence of Nanosecond-Scale Charge Injection During Domain Switching from Fast Imprint Measurements in Pb(Zr,Ti)O3 Thin Films at Low Temperatures

Unipolar and bipolar fatigue in antiferroelectric lead zirconate thin films and evidences for switching-induced charge injection inducing fatigue

Interfacial Depletion Layers Evidenced from Dielectric Relaxation Current in Ferroelectric Thin Films

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Polarization Fatigue in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer Thin Films

Evidences for Interfacial Phase Decomposition in Ferroelectric Thin Films During Fatigue

Evaluation of Interfacial-Layer Capacitance from Fast Polarization Retention in Ferroelectric Thin Films

The Improved Polarization Retention Through High-Field Charge Injection in Highly Strained Bifeo3 Thin Films with Preferred Domain Orientations

Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ $\textit{V}_{\text{th}}$ Measurement

Boosting Polarization Switching-Induced Current Injection by Mechanical Force in Ferroelectric Thin Films

Nonlinear Antiferroelectric-Like Capacitance-Voltage Curves in Ferroelectric Bifeo3 Thin Films

Formulization of Long-Time Domain Switching Around the Coercive Field from Imprint Measurements on Ferroelectric Thin Films

Strain-engineered inverse charge-funnelling in layered semiconductors

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

Estimation of Nonlinear Interfacial Capacitance from Domain Switching Current of Ferroelectric Thin Films