Abstract:The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as Rs and Rd, and intrinsic parameters were extracted. Utilizing fT and the SSEC parameters, the effective electron velocity (νe−eff) and intrinsic electron velocity (νe−int) corresponding to each gate bias (VGS) were obtained. Under active bias conditions, the influence mechanism of VGS on νe−eff was systematically studied, and an expression was established that correlates νe−eff, νe−int, and bias-dependent parasitic resistances. Through the analysis of the main scattering mechanisms in AlGaN/GaN HEMTs, it has been discovered that the impact of VGS on νe−eff should be comprehensively analyzed from the aspects of νe−int and parasitic resistances. On the one hand, changes in VGS influence the intensity of polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering, which lead to changes in νe−int dependent on VGS. The trend of νe−int with changes in VGS plays a dominant role in determining the trend of νe−eff with changes in VGS. On the other hand, both POP scattering and PCF scattering affect νe−eff through their impact on parasitic resistance. Since there is a difference in the additional scattering potential corresponding to the additional polarization charges (APC) between the gate-source/drain regions and the region under the gate, the mutual effects of PCF scattering on the under-gate electron system and the gate-source/drain electron system should be considered when adjusting the PCF scattering intensity through device structure optimization to improve linearity. This study contributes to a new understanding of the electron transport mechanisms in AlGaN/GaN HEMTs and provides a novel theoretical basis for improving device performance.

Noise Performance In Algan/Gan Hemts Under High Drain Bias

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

Characterization of 1/f Noise in GaN-based HEMTs under High Dc Voltage Stress (invited Paper)

1/F Noise in GaN/AlGaN HEMTs

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

High Frequency Noise Model of AlGaN/GaN HEMTs

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs under Electrical and Thermal Stress

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs under Electrostatic Discharge Stress

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor