Sensitivity of SEM Width Measurements to Model Assumptions

J. S. Villarrubia,Z. J. Ding

DOI: https://doi.org/10.1117/12.814300

2009-01-01

Abstract:ABSTRACT The most accurate width measurements in a scanning electron microscope (SEM) re quire raw images to be corrected forinstrumental artifacts. Corrections are based upon a physical model that describes the sample-instrument interaction.Models differ in their approaches or ap proximations in the treatment of scatte ring cross sections, secondary electron (SE)generation, material properties, scattering at the surface potential barrier, etc. Corrections that use different modelsproduce different width estimates. We have implemented eight models in the JMONSEL SEM simulator. Two arephenomenological models based upon fitting measured yield vs. energy curves. Two are based upon a binary scatteringmodel. Four are variants of a dielectric function approach. These models are compared to each other in pairwisesimulations in which the output of one model is fit to the other by using adjustable parameters similar to those used to fitmeasured data. The differences in their edge position parameters is then a measure of how much these models differ withrespect to a width measurement. With electron landing energy, beam width, and other parameters typical of those used inindustrial critical dimension measurements, the models agreed to within ± 2.0 nm on silicon and ± 2.6 nm on copper in95% of comparisons.Keywords: critical dimension (CD), model-based metrology, Scanning Electron Microscopy (SEM), secondary electrongeneration, uncertainty