Abstract:Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.

Phase-dependent Bistable Transitions in a Weakly-Coupled GaAs/AlAs Superlattice

Observation of Bistability in GaAs/AlAs Superlattices

Synchronization and Chaos Induced by Resonant Tunneling in GaAs/AlAs Superlattices.

Transition Between Synchronization and Chaos in Doped GaAs/AlAs Superlattices

Static and Dynamic Electric Field Domain Formation in a Doped GaAs/AlAs Superlattice

Optical Bistability in Semiconductor Periodic Structures

Step-Like I-V Characteristics and Period-Adding Bifurcations in External Ac-Driven Gaas/Alas Superlattices

External Ac-Signal-Controlled Dynamics of Electric Field Domains in A Gaas/Alas Superlattice

Self-Sustained Oscillations Caused by Magnetic Field in A Weakly-Coupled Gaas/Alas Superlattice

Current Self-Oscillation Induced by A Transverse Magnetic Field in A Doped Gaas/Alas Superlattice

Gate-tunable phase transition in a bosonic Su-Schrieffer-Heeger chain

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

Spontaneous Quasi-Periodic Current Self-Oscillations in A Weakly Coupled Gaas/(Al,Ga)As Superlattice at Room Temperature

Analysis of the Temperature-Induced Transition to Current Self-Oscillations in Doped GaAs/AlAs Superlattices

Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer

Crystalline Amorphous Semiconductor Superlattice

Phase Transition Properties of A Finite Ferroelectric Superlattice from the Transverse Ising Model

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Gate-tunable topological phases in superlattice modulated bilayer graphene

Role of Ge Switch in Phase Transition: Approach Using Atomically Controlled Gete/Sb2te3 Superlattice

Bistable Behavior in the Phase-Output Relation in Two-Dimensional Nonlinear Optical Superlattices