Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Study on Thermal Conductivity of Hydrogenated Amorphous Silicon Films

Thermal Conductivity Ofa-Si:H Thin Films

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Properties of plasma-deposited amorphous SiO2 films

High Thermal Conductivity of a Hydrogenated Amorphous Silicon Film

Heat-Transport in Micron Thick A-Si-H Films

Characterization of Hydrogenated Amorphous Silicon Thin Films Prepared by Pecvd

Effect of Substrate Temperature on the Optical Properties of A-Si:H Films by RF-PECVD

Anomalously High Thermal Conductivity of Amorphous Si Deposited by Hot-Wire Chemical Vapor Deposition

Anomalously High Thermal Conductivity of Amorphous Silicon Films Prepared by Hot-Wire Chemical Vapor Deposition

Influence of Substrate Temperature on the Microstructure and Optical Properties of Hydrogenated Silicon Thin Film Prepared with Pure Silane

Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

Effect of Technical Parameter on Optical Constants of Amorphous Silicon Thin Film

Thickness and Optical Constant Determination of Hydrogenated Amorphous Silicon Thin Film from Transmittance Spectra of Ellipsometer

Study on the Effect of Process Conditions on the Thermo-Optic Coefficient of Amorphous Silicon Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Enhancement of Thermal Conductivity of Hydrogenated Silicon Film by Microcrystalline Structure Growth

Observation of suppressed diffuson and propagon thermal conductivity of hydrogenated amorphous silicon films

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd