Structures and Electrical Properties of Bi5feti3o15 Thin Films
ST Zhang,YF Chen,ZG Liu,NB Ming,J Wang,GX Cheng
DOI: https://doi.org/10.1063/1.1893207
IF: 2.877
2005-01-01
Journal of Applied Physics
Abstract:Thin films of layered ferroelectric oxide Bi5FeTi3O15 have been fabricated on Pt-coated Si substrates by pulsed laser deposition. Temperature-dependent Raman studies reveal the phase-transition temperature of 550 °C, consistent with other reports. A new mode at 685cm−1 is observed and ascribed to the Bi–Fe–O perovskite block. With an applied field of 105kV∕cm, the leakage current density is 5.2×10−7A∕cm2, indicating the high room-temperature resistivity in the order of 1012Ωcm. With an applied external electric field of 210kV∕cm, the remnant polarization and coercive field of the films are measured to be 6.4μC∕cm2 and 112kV∕cm, respectively. The nonvolatile polarization of the films decreases about 15% of the initial value after 7.2×109 switching cycles. As for the dielectric properties, at 0.1 MHz, the measured dielectric constant and loss tangent are 172 and 0.024, respectively. The ferroelectric properties are comparable with that of other Bi-layered oxides, such as rare-earth substituted Bi4Ti3O12 films, which are promising candidates for application in ferroelectric memory.