Abstract:In this paper, a symmetric heterogate dopingless electron-hole bilayer tunnel field-effect transistor with a ferroelectric layer and a dielectric barrier layer (FBHD-EHBTFET) is proposed. FBHD-EHBTFET can not only avoid random doping fluctuation and high thermal budget caused by doping, but also solve the issue that conventional EHBTFETs are unable to use the self-alignment process during device manufacturing. The simultaneous introduction of the symmetric heterogate and dielectric barrier layer can significantly suppress off-state current (Ioff). Ferroelectric material embedded in the gate dielectric layer can enhance electron tunneling, contributing to improving on-state current (Ion) and steepening average subthreshold swing (SSavg). By optimizing various parameters related to the gate, ferroelectric layer, and dielectric barrier layer, FBHD-EHBTFET can obtain the Ioff of 1.11 × 10-18 A/μm, SSavg of 12.5 mV/dec, and Ion of 2.59 × 10-5 A/μm. Compared with other symmetric dopingless EHBTFETs, FBHD-EHBTFET can maintain high Ion while reducing its Ioff by up to thirteen orders of magnitude and SSavg by at least 51.2 %. Moreover, investigation demonstrates that both interface fixed charge and interface trap can increase Ioff, degrading the off-state performance of device. The study on FBHD-EHBTFET-based dynamic random access memory shows that it has the high read-to-current ratio of 1.1 × 106, high sense margin of 0.42 μA/μm, and long retention time greater than 100 ms, demonstrating that it has great potential in low-power applications.

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