Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Ferroelectric -Gate Field Effect Transistors: Working Principle,Materials Design and Recent Research Progress

Ferroelectric field effect transistors for electronics and optoelectronics

Ferroelectric field effect transistors: Progress and perspective

Computing with ferroelectric FETs: Devices, models, systems, and applications

Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Nonvolatile Ferroelectric Field-Effect Transistors.

The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures.

Recent Progress of Hafnium Oxide-Based Ferroelectric Devices for Advanced Circuit Applications

Ferroelectric Materials for Synaptic Transistors and Their Neuromorphic Applications

A Ferroelectric Semiconductor Field-Effect Transistor

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Research on the ferroelectric films and ferroelectric-field-effect memory

Ferroelectric‐Gated Two‐Dimensional‐Material‐Based Electron Devices

Fabrication And Characteristics Of A Metal/Ferroelectric/Polycrystalline Silicon/Insulator/Silicon Field Effect Transistor

Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFET

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation

2D ferroelectric devices: working principles and research progress.

Ferroelectric Negative Capacitance Field Effect Transistor