Effect of Substrate Temperature on Microstructures of HfO2 Films Deposited by RF Magnetron Sputtering

闫丹,吴平,邱宏,俞必强,赵云清,张师平,吕反修

DOI: https://doi.org/10.3969/j.issn.1007-4252.2008.05.011

2008-01-01

Abstract:HfO2 films were grown on p-Si(100) substrates by radio frequency magnetron sputtering using oxygen and argon mixture as sputtering gas.The ratio of oxygen to argon is 0.2.The substrate temperatures are room temperature,100℃,200 ℃,250 ℃,300 ℃,350 ℃ and 400 ℃,respectively.Influences of substrate temperature and deposition rate on microstructures of the films are investigated by Scanning electron microscope,X-ray diffraction and Atomic force microscope.The results show that deposition rate decreases with the increase of substrate temperature.The HfO2 film appears(1-11) monoclinic orientation when the substrate temperature increases to 100℃.With the substrate temperature increasing,the preferred orientation of(1-11) becomes more obvious,the grain size increases and the surface roughness decreases.