Abstract:Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Phi(M1)/Phi(M2) have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

CMOS-nano FPGA utilizing mechanical switches

Novel Mechanical Switch Devices For Reconfigurable Ic Applications

A FPGA prototype design emphasis on low power technique.

FPGA Based on Integration of CMOS and RRAM

Nanoelectromechanical Switch with Low Voltage Drive

Silicon Carbide (SiC) Nanoelectromechanical Antifuse for Ultralow-Power One-Time-Programmable (OTP) FPGA Interconnects

Circuit Design of A Novel Fpga Chip Fdp2008

Rfga: CMOS-nano Hybrid FPGA Using RRAM Components

Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices

FPGA based on integration of carbon nanorelays and CMOS devices

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

A 0.9V 10GHz 71μW Static D Flip-flop by using FinFET Devices

A 0.9v 10hz 71 Mu W Static D Flip-Flop By Using Finfet Devices

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

IGZO-based floating-gate synaptic transistors for neuromorphic computing

A nanogapped hysteresis-free field-effect transistor

A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

A Systematic Study of the Sharp-Switching Z2-FET Device: from Mechanism to Modeling and Compact Memory Applications

Device engineering and CMOS integration of nanoscale memristors