Abstract:Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required continuous voltage application for programming gate terminal(s) in addition to the primary gate terminal, which undermines the advantages of reconfigurable devices in realizing compact and power-efficient integrated circuits. Here, we realize reconfigurable devices based on a single-gate field-effect transistor (FET) architecture by integrating semiconducting channels consisting of a monolayer film of highly aligned SWCNTs with a ferroelectric AlScN gate dielectric, all compatible with CMOS back-end-of-line (BEOL) processing. We demonstrated these SWCNT ferroelectric FETs (FeFETs) in a centimeter-scale array (~1 cm^2) comprising ~735 devices, with high spatial uniformity in device characteristics across the array. The devices exhibited ambipolar transfer characteristics with high on-state currents and current on/off ratios exceeding 10^5, demonstrating an excellent balance between electron and hole conduction (~270 {\mu}A/{\mu}m at a drain voltage of 3 V. When functioning as a non-volatile memory, the SWCNT FeFETs demonstrated large memory windows of 0.26 V/nm and 0.08 V/nm in the hole and electron conduction regions, respectively, combined with excellent retention behavior for up to 10^4 s. Repeated reconfiguration between p-FET and n-FET modes was also enabled by switching the spontaneous polarization in AlScN and operating the transistor within a voltage range below the coercive voltage. We revealed through circuit simulations that reconfigurable SWCNT transistors can realize ternary content-addressable memory (TCAM) with far fewer devices compared to circuits based on silicon CMOS technology or based on resistive non-volatile devices.

FPGA based on integration of carbon nanorelays and CMOS devices

Carbon Nanotube Nanorelays with Pass-Transistor for Fpga Routing Devices

FPGA Based on Integration of CMOS and RRAM

Rfga: CMOS-nano Hybrid FPGA Using RRAM Components

FPGA based cellular neural network optimization: from design space to system.

Cellular Neural Network (CENN) FPGA implementation using multi-level optimization

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

A Multi-Level-Optimization Framework for FPGA-Based Cellular Neural Network Implementation.

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

3D Integration of Cmol Structures for Fpga Applications

Homogeneous NoC-based FPGA: The Foundation for Virtual FPGA

Connect on the Fly: Enhancing and Prototyping of Cycle-Reconfigurable Modules

Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines

Reconfigurable SWCNT ferroelectric field-effect transistor arrays

FPAA Based on Integration of CMOS and Nanojunction Devices for Neuromorphic Applications

A FPGA prototype design emphasis on low power technique.

Floating Gate Carbon Nanotube Dual-Gate Field-Effect Transistor for Reconfigurable AND/OR Logic Gates

Wafer-scale carbon-based CMOS PDK compatible with silicon-based VLSI design flow

A Combined N/PFET CFET-Based Design and Logic Technology Framework for CMOS Applications

CMOS-nano FPGA utilizing mechanical switches