The exposure process study of 100KV JBX-6300LS electron-beam nanolithograph system

Li, Qunqing,Lihui Zhang,Mo Chen,Fan, Shoushan
DOI: https://doi.org/10.1109/INEC.2008.4585685
2008-01-01
Abstract:We report on a series results of the performance of a Jeol model JBX-6300LS electron-beam nanolithography system operating at 100 KV. The exposure conditions are optimized to fabricate dense lines with 1:1 L/S and with the line-widths down to 30 nm for resist ZEP520A and PMMA. The lines show a very good uniformity within an area as large as 2 mmtimes2 mm. We obtained isolated metal lines with 22 nm widths through lift-off process based on 170 nm thick PMMA. Exposure studies were also performed for double layer resists to get a good under-cut cross section profile.
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