Abstract:Vertical-cavity surface-emitting lasers (VCSELs) have emerged as a pioneering solution for many high-speed data communication challenges. Compared to large-signal analyses, the small-signal modulation response of a VCSEL can be isolated from the entire system, thus providing accurate information on the intrinsic laser dynamics. An alternative approach to that of using the rate equations is to transform theses rate equations to an equivalent circuit model. The dynamic operation characteristics including the device-circuit interaction can then be modeled and optimized using a circuit simulation software. Until now, it was assumed that the dynamic behavior of oxide-confined multi-mode VCSELs can be modeled using the single-mode rate equations developed for edge-emitters, even though the deviation between the single-mode based model and the measured data is substantially large. Furthermore, equivalent electrical circuit modeling of the VCSELs’ intrinsic dynamics was only done by modeling derived from the single-mode rate equations. Therefore, a new electrical circuit model, that can accurately describe the dynamic behavior of these VCSELs, is needed. In this work, electrical circuit modeling of the dynamic performance of multi-mode VCSELs, for the case where lasing modes do not share a common carrier reservoir, is presented. The electrical circuit model is derived from innovative advanced multi-mode rate equations that take into account the effect of spatial hole burning, gain compression, and inhomogeneity in the carrier distribution. The validity of the model is affirmed through experimental data fittings and plots of their modulation response are presented.

Dynamical Response Time of Vertical Cavity Semiconductor Optical Switch

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

The Electrical Turn-on Characteristics of Vertical-Cavity Surface-Emitting Lasers

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

A Simple Model for Cavity Enhanced Slow Lights in Vertical Cavity Surface Emission Lasers

Simulating the Spiking Response of VCSEL-based Optical Spiking Neuron

Research of high speed optical switch based on compound semiconductor

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Experimental Demonstration of Subnano-Second Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Analysis of Pulse Amplification Characteristics in Vertical Cavity Semiconductor Optical Amplifiers

High-speed compact silicon digital optical switch with slot structure

Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Vertical-Geometry All-Optical Switches Based on Inas/Gaas Quantum Dots in A Cavity

Equivalent circuit modeling of the dynamic operation of ultra-high speed multi-mode VCSELs

Theoretical Analysis on Dynamics and Bifurcations Characteristics of VCSELs with Phase Conjugate Optical Feedback

Electro-Optic Polymer Assisted Optical Switch Based on Silicon Slot Structure

Observation of Phase Shifts in a Vertical Cavity Quantum Dot Switch