Abstract:The accurate predicting of thermal conductivity of GaN semiconductors, especially GaN films, is of great importance for the thermal management in electronic devices. In this paper, a theoretical model based on the first-principles calculations and Debye-Callaway model is proposed to predict the thermal conductivity of GaN films, which is a function of temperature, isotope, point defects, dislocations, film thickness, and strain fields. Specifically, the coefficients in our theoretical model that used to capture umklapp scattering and phonon-isotope scattering are fitted with the data from first-principles calculations, and two sub-models for point defects scattering and dislocation scattering are discussed, respectively. The sub-model of boundary scattering with suppression function is introduced to describe the anisotropy of size effect, and the effect of in-plane strain (perpendicular to polar axis) is also discussed. The comparison between theoretical predictions and experimental data shows that the model performs well roughly in a large temperature range from 300 to 500 K, with an around 20% difference at room temperature. Our predicted temperature dependent thermal conductivity deviates slightly from the measurements, which may result from the lack of high-order phonon scattering in our model, e.g., four-phonon scattering. Our results also show that the first-principles calculations for GaN overestimates the influence of isotope scattering. We further study the thermal transport properties of GaN film which are influenced by the thickness, dislocation density, and point defect density through using the new theoretical model. Significant reduction of thermal conductivity is found to occur at a film thickness of 10 mu m, which is consistent with the findings from the first-principles calculations. The isotope and defects including point defects and dislocations are found to have a weak influence on the thermal conductivity when the thickness of GaN film is larger than 100 nm, while the influence becomes significant for the film with and below 100 nm in thickness. In addition, dislocations and point defects start to reduce thermal conductivity significantly when the surface density of dislocations increases to 10(10) cm(-2) and point defect density reaches 10(18) cm(-3).

Numerical investigation of thermal conductivity in Lateral Epitaxy Overgrown GaN

Effect of Isotope on Lattice Thermal Conductivity of Lateral Epitaxial Overgrown GaN

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

On the Role of Piezoelectricity in Phonon Properties and Thermal Conductivity of GaN Nanofilms

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Thermal Conductivity Modeling of GaN Films

Influence of dislocations on the thermal decomposition of GaN

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Opposite Atom Dependence of Isotope Engineering of Thermal Conductivity in Bulk and 2D GaN.

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Theoretical investigation of electronic structure and thermoelectric properties of C N point defects in GaN

Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

Impact of screw and edge dislocations on the thermal conductivity of individual nanowires and bulk GaN: a molecular dynamics study.

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Diffusion and Ballistic Contributions of Electron–electron Interaction to the Conductivity in an Al0.26Ga0.74N/AlN/GaN Heterostructure

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

Thermal Analysis of AlGaN/GaN HEMTs Considering Anisotropic And Inhomogeneous Thermal Conductivity