Abstract:Two centrosymmetric gallium nitride phases, one with a body-centered-tetragonal structure (bct-GaN) and the other base-centered orthorhombic (Z-GaN), are predicted. The inversion symmetry inherently inhibits spontaneous polarization, and more importantly, piezoelectric polarization regardless of heteroepitaxial growth direction and even in the presence of shear strain, offering alternative solutions to the polarization-induced electrostatic field problem encountered by group-III nitride-based light-emitting diodes (LEDs), beyond those promised by nonpolar and semipolar wurtzite (w-GaN) and zinc-blende GaN. Density functional theory calculations, validated by agreement with experiment for w-GaN, reveal equilibrium structures, phonon dispersions, and band structures of bulk bct-GaN and Z-GaN. To ensure their stability at room temperature, we first carry out an analysis of dynamical and thermal stability using phonon calculations and molecular dynamics simulations, which indicate that these centrosymmetric structures are dynamically stable and remain stable at high temperature. Moreover, the relative stability of GaN polymorphs is highly dependent on sample thickness. We predict that bct-GaN and Z-GaN are energetically more favorable than w-GaN for freestanding ultrathin films up to 47 and 70 layers, respectively, thus suggesting the possibility of the kinetic growth of these two phases. The GW self-energy corrected, direct band gaps of bct-GaN and Z-GaN are close to the w-GaN value, promising LED applications in the same spectral ranges.

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