Robust Ferromagnetism of Single Crystalline CoxZn1−xO (0.3 ≤ X ≤ 0.45) Epitaxial Films with High Co Concentration
Qiang Cao,Dapeng Zhu,Maoxiang Fu,Li Cai,Ping Yang,Shuang Li,Yinlian Zhu,Xiuliang Ma,Guolei Liu,Yanxue Chen,Shishen Yan,Liangmo Mei,Xiaolin Wang
DOI: https://doi.org/10.1063/1.4960555
IF: 4
2016-01-01
Applied Physics Letters
Abstract:In contrast to conventional dilute magnetic semiconductors with concentrations of magnetic ions of just a few percent, here, we report the fabrication of epitaxial CoxZn1−xO single crystalline films with Co concentrations from x = 0.3 up to 0.45 by radio-frequency oxygen-plasma-assisted molecular beam epitaxy. The films retain their single crystalline wurtzite structure without any other crystallographic phase from precipitates, based on reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy, and Raman scattering. The results of X-ray diffraction, optical transmission spectroscopy, and in-situ X-ray photoelectron spectroscopy confirm the incorporation of Co2+ cations into the wurtzite lattice. The films exhibit robust ferromagnetism and the magneto-optical Kerr effect at room temperature. The saturation magnetization reaches 265 emu/cm3 at x = 0.45, which corresponds to the average magnetic moment of 1.5 μB per Co atom.