Abstract:The nature of bandedge electronic structure represents a theoretically interesting and technologically important question in arsenic-doped narrow-gap HgCdTe. In this study, temperature-dependent (11-290 K) photo-reflectance (PR) measurements were carried out in midinfrared spectral region on three as-grown arsenic (As)-doped narrow-gap Hg1-xCdxTe (x=0.317, 0.287, and 0.310, respectively) samples prepared by molecular-beam epitaxy. Low-energy photomodulated Fabry-Perot interference (FPI) and high-energy Franz-Keldysh oscillation (FKO) were analyzed and bandedge PR features were discriminated. Curve fittings of the bandedge PR features were performed, band-gap and below-gap PR processes were identified, and critical energies were determined. While no obvious FPI and FKO could be identified for the sample with a doping level of about 10(18) cm(-3), they were strong for the doping levels of about 10(16)-10(17) cm(-3), and got enhanced with temperature. Detailed analyses indicated that the below-gap PR features are linked to donor-acceptor, conduction-bandacceptor, and donor-valence-band transitions. The average energy levels of the donor and acceptor states were evaluated to be about 17 +/- 1 meV and 27 +/- 3 meV below conduction-band minimum, and 14 +/- 1 meV above valence-band maximum at 77 K, and the origins were assigned to As-Hg, Te-Hg, and V-Hg, respectively. The effect of possible deep-level impurities were also discussed, and a value of about 69 meV above the valence-band maximum was assumed preliminarily for the second level of VHg acceptor (V-Hg(II)) and 42 meV below the conduction-band minimum for As tetramer [(As-Hg-A(si))(dimmer)](3). The evolution of PR critical energies with temperature was compared with an empirical formula for HgCdTe band-gap energy, and the implication of "effective band gap" was evidenced for the empirical formula. Finally, a schematic diagram was drawn for the bandedge electronic structure of the as-grown As-doped narrow-gap HgCdTe epilayers.

Temperature-dependent Absorption Spectra Investigation of Shallow Levels in HgCdTe Grown by Liquid Phase Epitaxy

Anomalous Temperature Dependence of Absorption Edge in Narrow-Gap Hgcdte Semiconductors

Optical and Electronic Characterization on HgCdTe Materials

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Evolution of Infrared Photoreflectance Lineshape with Temperature in Narrow-Gap HgCdTe Epilayers

Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors

In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth

Impurity Levels and Bandedge Electronic Structure in As-Grown Arsenic-Doped HgCdTe by Infrared Photoreflectance Spectroscopy

New insight into defect energy levels in HgCdTe

Influence of defect levels in short wavelength Hg1-xCdxTe photodiodes on the performance of device

PHOTOLUMINESCENCE STUDY ON HG1-XCDXTE THIN-FILM IMPLANTED WITH AS ION

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Composition Control and Surface Defects of MBE-grown HgCdTe

Application of infrared transmission spectra in the assessment of HgCdTe epilayers

A Deep Level Induced By Gamma Irradiation In Hg1-Xcdxte

Arsenic-doped Narrow-Gap HgCdTe Epilayers Studied by Infrared Modulation Spectroscopy

Study Of Interdiffusion In Hgcdte/Cdznte Structures By Infrared Transmission Spectroscopy

Study of dislocation density in MBE HgCdTe epilayers

Molecular Beam Epitaxy of Hgcdte on (211)B Cdznte

Cutoff Wavelength of Hg1-Xcdxte Epilayers by Infrared Photoreflectance Spectroscopy

MBE HgCdTe on Si and GaAs Substrates