Abstract:In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe]m[Bi2Te3]n, which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi2Te3]n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe-nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 +/- 0.04 A and 4.39 +/- 0.04 A, respectively-can be selectively grown on c-plane Al2O3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In2Se3 buffer layer, despite its lattice constant (4.02 A) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi2Te3, sharing the same lattice constant (4.39 A) with the ZB-WZ phase, fosters the NC phase. These discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

Structural Properties Of Znte Epilayers Grown On (0001)Alpha-Al2o3 Substrates By Metalorganic Vapor Phase Epitaxy

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Investigation of the CdZnTe (2 1 1) and (1 3 3) films grown on GaAs (2 1 1) controlled by temperature: Experiment and first-principles calculations

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

High-temperature growth of ZnSnN2 layer via radiofrequency magnetron sputter epitaxy

Growth of High-Quality ZnO Thin Films on ( 112̅0 ) A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Epitaxial Growth of Zno Layers on (111) Gaas Substrates by Laser Molecular Beam Epitaxy

Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates

Structural, Morphology and Optical Properties of Epitaxial Zno Films Grown on Al2o3 by Mocvd

Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates

Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Influence of Thermally Diffused Aluminum Atoms from Sapphire Substrate on the Properties of ZnO Epilayers Grown by Metal-Organic Chemical Vapor Deposition