Epitaxial Growth of Zno Layers on (111) Gaas Substrates by Laser Molecular Beam Epitaxy

Jian Ding,Di Zhang,Takaharu Konomi,Katsuhiko Saito,Qixin Guo

DOI: https://doi.org/10.1016/j.tsf.2011.11.018

IF: 2.1

2012-01-01

Thin Solid Films

Abstract:ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550°C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.