Abstract:The purpose with the present study has been to theoretically investigate the effect of P (or S) doping on the chemical vapor deposition (CVD) growth rate of diamond. Density functional theory (DFT) calculations under periodic boundary conditions were then used for the investigation of the highly symmetric H-terminated diamond (111) surface. It was shown that both the thermodynamics and kinetics of P (or S) substitutional doping during diamond (111) growth were severely affected by the dopants (as compared with the non-doped situation). As a result of the thermodynamic calculations, except for P doping in C layer 1, the thermodynamic driving force for the diamond (111) growth was found to be largely improved by positioning P within the upper surface region of the H-terminated diamond (111) surface, while the opposite was true for S-doping. The P doping had a local vertical influence on the H abstraction energies, which was not the situation for the S doping. Also, both P and S doping showed a local lateral influence on the H abstraction energies, which was more pronounced for P doping. As a result of the kinetic calculations, the vertical and lateral P doping showed no local effect on the H abstraction energy barriers. In fact, these energy barriers became zero for P positioned in C layer 2 and downwards and were also zero for longer distances from the H adsorbate. On the other hand, the vertical S doping showed a local effect on the calculated barrier energies, but no lateral effect. The calculated energy barriers were zero for all surface H adsorbates on the H-terminated diamond (111) surface when S was positioned in the 4th atomic C layer. The different results for P doping versus S doping could be explained by the fact that S contains one electron extra and that P has a larger electronegativity value. Consequently, the results showed that P positioned in the upper diamond (111) surface lattice caused an enhancement in the diamond growth rate. The exception was the position in C atomic layer 1, for which both P doping and S doping had no effect on the diamond growth rate. On the other hand, a growth rate improvement was only found for S positioned in the 4th C layer. Due to the much higher (i.e., more positive) theoretical incorporation energies of S dopants versus P dopants in the diamond lattice, it has here been concluded that P doping is more effective than S doping in increasing the growth rate of the H-terminated diamond (111). Especially when considering that the H adsorbates are very mobile on this diamond surface, which has been shown by ab initio MD simulations at experimental CVD temperatures. These observations correlate well with experimental results.

Study of the Stress in Doped Cvd Diamond Films

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Evaluation of stress in (111) homoepitaxial CVD diamond films by Raman spectrum and nitrogen-vacancy centers

Study of the Stress Observed in Diamond Films on Carbon-Implanted Alumina Surfaces

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

Fracture Strength and Toughness of Chemical-Vapor-deposited Polycrystalline Diamond Films

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Insight into BS ratio model and surface atom interactions of co-doping diamond: First-principles studies

Enhancing the mechanical properties of single-crystal CVD diamond.

Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111)

Stress engineering of high-quality single crystal diamond by heteroepitaxial lateral overgrowth

Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

Comparing Internal Stress in Diamond-Like Carbon Films with Different Structure

Ex Situ Residual Stress Analysis of Chemical Vapor Deposited Diamond Coated Cutting Tools by Synchrotron X‐Ray Diffraction in Transmission Geometry

Morphology, Defects and Electrical Properties of Boron-Doped Single Crystal Diamond under Various Oxygen Concentration

The 4.438 MeV gamma to neutron ratio for the Am-Be neutron source.

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces

The first principle study and experimental of boron synergistic sulfur doping in diamond

Effect of Oxygen on Regulation of Properties of Moderately Boron-Doped Diamond Films