Abstract:The purpose with the present study has been to theoretically investigate the effect of P (or S) doping on the chemical vapor deposition (CVD) growth rate of diamond. Density functional theory (DFT) calculations under periodic boundary conditions were then used for the investigation of the highly symmetric H-terminated diamond (111) surface. It was shown that both the thermodynamics and kinetics of P (or S) substitutional doping during diamond (111) growth were severely affected by the dopants (as compared with the non-doped situation). As a result of the thermodynamic calculations, except for P doping in C layer 1, the thermodynamic driving force for the diamond (111) growth was found to be largely improved by positioning P within the upper surface region of the H-terminated diamond (111) surface, while the opposite was true for S-doping. The P doping had a local vertical influence on the H abstraction energies, which was not the situation for the S doping. Also, both P and S doping showed a local lateral influence on the H abstraction energies, which was more pronounced for P doping. As a result of the kinetic calculations, the vertical and lateral P doping showed no local effect on the H abstraction energy barriers. In fact, these energy barriers became zero for P positioned in C layer 2 and downwards and were also zero for longer distances from the H adsorbate. On the other hand, the vertical S doping showed a local effect on the calculated barrier energies, but no lateral effect. The calculated energy barriers were zero for all surface H adsorbates on the H-terminated diamond (111) surface when S was positioned in the 4th atomic C layer. The different results for P doping versus S doping could be explained by the fact that S contains one electron extra and that P has a larger electronegativity value. Consequently, the results showed that P positioned in the upper diamond (111) surface lattice caused an enhancement in the diamond growth rate. The exception was the position in C atomic layer 1, for which both P doping and S doping had no effect on the diamond growth rate. On the other hand, a growth rate improvement was only found for S positioned in the 4th C layer. Due to the much higher (i.e., more positive) theoretical incorporation energies of S dopants versus P dopants in the diamond lattice, it has here been concluded that P doping is more effective than S doping in increasing the growth rate of the H-terminated diamond (111). Especially when considering that the H adsorbates are very mobile on this diamond surface, which has been shown by ab initio MD simulations at experimental CVD temperatures. These observations correlate well with experimental results.

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Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111)

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Growth Morphology of Boron Doped Single Crystal Diamond

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Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

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The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

The Surface Effect on the Growth of Related Color Centers in Diamond

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Influence of CVD diamond growth conditions on nitrogen incorporation

Effect of Pressure on the Growth of Boron and Nitrogen Doped HFCVD Diamond Films on WC–Co Substrate

Influence of Boron Doping on Growth Characteristic of Diamond Films Prepared by Hot Cathode Dc Chemical Vapor Deposition

Ab initio investigation of the effects of B-doping on the adsorption of H2O, H2 and O2 molecules at diamond surfaces

Growth rate and EBSD texture analysis of nitrogen doped diamond films

Insight into BS ratio model and surface atom interactions of co-doping diamond: First-principles studies

Effect of Near‐Surface Dopants on the Epitaxial Growth of H‐bn on Metal Surfaces

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Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study

The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth