Evaluation of stress in (111) homoepitaxial CVD diamond films by Raman spectrum and nitrogen-vacancy centers

Takeyuki Tsuji,Chikara Shinei,Takayuki Iwasaki,Mutsuko HATANO,Tokuyuki TERAJI
DOI: https://doi.org/10.35848/1882-0786/ad88d4
IF: 2.819
2024-10-20
Applied Physics Express
Abstract:Reduction of inhomogeneous stress in diamond is crucially important for extracting excellent performance of semiconducting diamond. In this study, to investigate elastic deformation in nitrogen doped (111) diamond films caused by stress, we evaluated the stress in these films using confocal Raman microscopy. The stress was detectable when the misorientation angle (θ mis ) was below 3.7° and it decreased as θ mis increased. The Raman spectroscopic measurements, considered together with reported stress measurements by nitrogen-vacancy centers, suggest that the diamond film at low θ mis was subjected to compressive stresses that were stronger in the [111] direction than [1-10] or [-1-12] directions.
physics, applied
What problem does this paper attempt to address?