Comparative Studies of Nanoscale SiC Whisker and Si/N/C Doped MgB2 Tapes

x p zhang,y w ma,z s gao,d l wang,zheng guang yu,gen nishijima,kazuo watanabe,j d guo
DOI: https://doi.org/10.4028/www.scientific.net/MSF.546-549.2041
2007-01-01
Materials Science Forum
Abstract:Fe-sheathed MgB2 tapes were prepared by the in situ powder-in-tube (PIT) technique using nanoscale SiN/C and SiC whisker as doping materials, respectively. It is found that the doped tapes exhibited superior field performance and higher critical current (J(C)) values than the undoped tapes in the magnetic field up to 12 T. Moreover, the improvement of J(C) for the SiC, whisker doped samples was more significantly than that in Si/N/C doped tapes, while flux pinning ability enhancements were similar. It is proposed that the difference of impurity content in MgB2 matrix, which affects the grain connectivity, is responsible for J(C) value difference between Si/N/C and SiC whisker doped samples.
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