Effect of the processing parameters of MgB1.8(SiC)0.1/Fe tapes on the critical current density

S.H. Zhou,A.V. Pan,M.J. Qin,H.K. Liu,S.X. Dou

DOI: https://doi.org/10.1016/S0921-4534(03)00735-4

2003-01-01

Abstract:Nano-SiC doping into MgB2 has induced extraordinary enhancement in critical current density (Jc) and flux pinning as a result of Si and C co-substitution into the lattice and the formation of nano-inclusions within the grains. In this work, a systematic study of the effect of the preparation parameters for processing MgB1.8(SiC)0.1/Fe tapes on critical temperature (Tc), critical current density (Jc) and microstructures was carried out. A mixture of Mg and B was doped with nano-SiC particle powder, and the SiC-doped samples were fabricated with the reaction in situ method. The samples were characterised using X-ray diffraction, scanning electronic microscopy and magnetisation measurements. It was found that the sintering temperature had a strong effect on both Tc and Jc. Tc was increased with sintering temperature, while Jc of the tapes sintered at 750 and 850 °C is higher than that of the tapes sintered at 680 and 950 °C. A longer sintering time was found to be beneficial to Tc but has negligible effects on Jc. Slow cooling improves the Jc field performance at 20 and 30 K. Uniaxial pressure (250 and 680 MPa) applied to tapes before sintering has almost no effect on Jc.