Low-Temperature Annealing Effect of RF Inductor with ${\Hbox{feni-Sio}}_{2}$ Granular Film

Hongfang Sun,Zewen Liu,Jiahao Zhao,Li Wang,Jing Zhu
DOI: https://doi.org/10.1109/tmag.2007.898799
IF: 1.848
2007-01-01
IEEE Transactions on Magnetics
Abstract:A low-temperature annealing process in vacuum is proposed to enhance the inductance of RF inductors with FeNi-SiO2 magnetic granular films. Due to the great improvement of soft magnetic property in the 200 degrees C and 350 degrees C annealed film, the inductance is enhanced by 9.6% (200 degrees C) and 8.3% (350 degrees C), respectively, compared with the case of as-deposited film inductor. The peak value of quality factor, which is 9.18 for the as-deposited film inductor, is also increased to 9.27 (200 degrees C) and 12.27 (350 degrees C), respectively.
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