Abstract:Monocrystalline silicon is highly promising for applications as semiconductor materials in electronic devices. However, the intrinsic brittleness of Si as well as the relatively low conductivity has restricted its wide application. In this paper, the optimized electronic and mechanical properties of monocrystalline silicon doped with trace content of N or P (SiMx, X = 0, 0.2%, 0.46%, 1.5%, M = N, P) were investigated by first-principles calculations. The results show that the doping of N or P elements can improve the mechanical and electronic properties of monocrystalline silicon, and with the increase of doping concentration, the improving effect becomes more obvious. In addition, the doping of N has a stronger effect on Si than that of P. The doping N, P atoms can form polar covalent bonds to enhance the covalency between atoms, improve the mechanical of Si. Electronic structure analysis shows that the doping of N or P atom makes the hybridization of s-orbital and p-orbital stronger, thus narrows the band gap and improves the conductivity of Si. Furthermore, as the concentration of doping elements increases, Si goes from indirect to direct semiconductor, which is beneficial to improve the recombination of excited electron-hole pairs due to there is no momentum difference between the two positions in k space.

Study The Effects Of The Doped-B Atom On Silicon Nanodot

Investigation of the Doping Failure Induced by Db in the Sinws Using First Principles Method

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Doping silicon nanocrystals with boron and phosphorus

First-principles Study of the Effects of Si Doping on Geometric and Electronic Structure of Closed Carbon Nanotube

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Theoretical Study of the Properties of Si Nanowire Electronic Devices

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Effects of Doping on Photoelectrical Properties of One-Dimensional Α-Si3n4 Nanomaterials: A First-Principles Study

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

The Influence of Silicon Atom Doping Phagraphene Nanoribbons on the Electronic and Magnetic Properties

Dopant Atoms As Quantum Components in Silicon Nanoscale Devices

Electron Spin Resonance in P-doped Si Nanocrystals/sic Stacked Structures with Various Dot Sizes

Electronic and Mechanical Properties of Monocrystalline Silicon Doped with Trace Content of N or P: A First-Principles Study

Study on Luminescence Quenching of Ultra-Small Silicon Nanocrystals Due to Boron Doping

Effects of Heteroatom (B or N)-doping on the Electronic and Transport Properties of Armchair Silicene Nanoribbon

First-Principles Study of Lithium Absorption in Boron- or Silicon-Doped Single-Walled Carbon Nanotubes